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| NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large-signal output amplifier stages. Intended for use in Citizen-Band communications equipment operating to 30MHz. High breakdown voltages allow a high percentage of up-modulation in AM circuits. Features: D Specified 12.5V, 28MHz Characteristic: Power Output = 3.5W Power Gain = 10dB Efficiency = 70% Typical Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 V(BR)CES IC = 200mA, VBE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz - 35 70 pF hFE VCE = 2V, IC = 400mA 10 - - - V(BR)EBO IE = 1mA, IC = 0 ICBO VCB = 15V, IE = 0 30 60 3 - - - - - - - - 0.01 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C, unless otherwise specified) Parameter Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency Percent Up-Modulation Parallel Equivalent Input Resistance Parallel Equivalent Input Capacitance Parallel Equivalent Output Capaciatnce GPE - Rin Cin Cout POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz, Note 3 f = 27MHz, Note 2 POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz POUT = 3.5W, VCC = 12.5V, f = 27MHz 10 - - - - - - - dB % % Symbol Test Conditions Min Typ Max Unit 62.5 70.0 - - - - 85 21 900 200 pF pF Note 2. = RF POUT 100 (VCC) (IC) Note 3. Percentage Up-Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 12.5Vdc and noting the power input. The peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25Vdc (to simulate the modulating voltage). Percentage Up-Modulation is then determined by the relation: Percentage Up-Modulation = (PEP) 1/2-1 100 PC .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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